Reference number
ISO 23812:2009
International Standard
ISO 23812:2009
Surface chemical analysis — Secondary-ion mass spectrometry — Method for depth calibration for silicon using multiple delta-layer reference materials
Edition 1
2009-04
Read sample
ISO 23812:2009
41867
Published (Edition 1, 2009)
This publication was last reviewed and confirmed in 2020. Therefore this version remains current.

ISO 23812:2009

ISO 23812:2009
41867
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Format
CHF 129
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Abstract

ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.

It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.

It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.

General information

  •  : Published
     : 2009-04
    : International Standard confirmed [90.93]
  •  : 1
     : 19
  • ISO/TC 201/SC 6
    71.040.40 
  • RSS updates

Life cycle

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