Reference number
ISO 14706:2014
International Standard
ISO 14706:2014
Surface chemical analysis — Determination of surface elemental contamination on silicon wafers by total-reflection X-ray fluorescence (TXRF) spectroscopy
Edition 2
2014-08
Read sample
ISO 14706:2014
61870
Published (Edition 2, 2014)
This publication was last reviewed and confirmed in 2021. Therefore this version remains current.

ISO 14706:2014

ISO 14706:2014
61870
Language
Format
CHF 129
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Abstract

ISO 14706:2014 specifies a TXRF method for the measurement of the atomic surface density of elemental contamination on chemomechanically polished or epitaxial silicon wafer surfaces. The method is applicable to the following: elements of atomic number from 16 (S) to 92 (U); contamination elements with atomic surface densities from 1 × 1010 atoms/cm2 to 1 × 1014 atoms/cm2; contamination elements with atomic surface densities from 5 × 108 atoms/cm2 to 5 × 1012 atoms/cm2 using a VPD (vapour-phase decomposition) specimen preparation method.

General information

  •  : Published
     : 2014-08
    : International Standard confirmed [90.93]
  •  : 2
     : 25
  • ISO/TC 201
    71.040.40 
  • RSS updates

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